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    MEMORY KIT CATALOGPDF · page 2Page 2

    IC Revision Classifier

    October 2026 · 4083 kits · 131 OEM/reference DIMMs

    This catalogue covers desktop UDIMM/CUDIMM memory: kits of exactly two modules, each at least 16 GB, and individual OEM modules from 16 GB. Kits of 2×8 GB and four-module kits are excluded.

    SO-DIMM, CAMM2/LPCAMM2, RDIMM/LRDIMM/MRDIMM, NVDIMM/CXL server modules and Industrial / Embedded DIMM/SO-DIMM are NOT INCLUDED.

    DRAM IC revision classification

    DRAM IC revision classification
    CodeUseVendor/Density/RevNote
    H16ADESK/OEMSK hynix, 16 Gbit, A-die16 Gbit = 2 GB per die (H16M successor — Q3/2022)
    H16MDESK/OEMSK hynix, 16 Gbit, M-die16 Gbit = 2 GB per die (early M-die — Q4/2020)
    H24MDESK/OEMSK hynix, 24 Gbit, M-die24 Gbit = 3 GB per die (the non-binary "benchmark")
    H32ADESKSK hynix, 32 Gbit, A-die32 Gbit = 4 GB per die (new 2×32, 2×64+)
    H8A1DESKSK hynix, 8 Gbit; A per SPDKLEVV FIT V. Sample: 16 GB, 2Rx8; 16 IC×1 GB.
    H8H2DESKSK hynix, 8 Gbit, H per SPD8 Gbit = 1 GB per die (down-binned parts for Patriot)
    H32MDESK/OEMSK hynix, 32 Gbit, M-die32 Gbit = 4 GB per die (new 2×32, 2×64+)
    M16ADESK/OEMMicron, 16 Gbit, Rev. AEarly Micron DDR5 generation. Q3/2021. 4800 MT/s
    M16D3DESK/OEMMicron, 16 Gbit, Rev. D1β process. Q4/2023. Also Y52K. Limited OC potential
    M16GDESK/OEMMicron, 16 Gbit, Rev. GEarly Micron DDR5 generation. Q2/2022. 5200/5600 MT/s
    M16HDESK/OEMMicron, 16 Gbit, Rev. HRecent Micron DDR5 revision. Q4/2025. Limited OC potential
    M32B4DESKMicron, 32 Gbit32 Gbit = 4 GB per die (new 2×32, 2×64+)
    M24BDESK/OEMMicron, 24 Gbit, Rev. BWeak non-binary revision — Q1/2023
    M24C5OEMMicron, 24 Gbit, Rev. CNative JEDEC 7200. Micron CUDIMM: 24/48 GB
    S16BDESK/OEMSamsung, 16 Gbit, B-dieEarly Samsung DDR5 generation, 1y process. Q3/2021Early Samsung DDR5 generation, 1y process. Q3/2021
    S16SDESKSamsung, 16 Gbit, S-dieProcess ?. Q1/2024. Found in CORSAIR modules
    S24BDESKSamsung, 24 Gbit, B-dieWeak non-binary revision — Q3/2023
    S32MDESKSamsung, 32 Gbit, M-die32 Gbit = 4 GB per die (new 2×32, 2×64+)
    S16PDESK/OEMSamsung, 16 Gbit, P-die1a process. Q1/20231a process. Q1/2023
    S16DDESK/OEM7Samsung, 16 Gbit, D-dieD1a process, ~Q2/2023. OC potential limited/unknown.
    S16EDESK/OEM7Samsung, 16 Gbit, E-dieD1b process, ~Q2/2023. OC potential limited/unknown.
    N16A6DESKNanya, 16 Gbit, A-die16 Gbit = 2 GB per die; COLORFUL
    1. 1 H8A. A is decoded from the SPD of sample KD5AGU880-60A320F; IC marking: ESSENCORE E5CC8G8N3JR KPC. The physical die revision and original SK hynix P/N are unconfirmed. ≈H8A for other SKUs is inferred; other batches may differ.
    2. 2 H8H. Patriot PVV532G640C32K: SPD reports 8 Gbit (1 GB), H-die, 2 ranks. These may be partially disabled 16-Gbit ICs; a distinct production SK hynix 8-Gbit H-die has not been publicly confirmed.
    3. 3 M16D. Also referred to as Y52K, the die design code for Micron DDR5 16 Gbit Rev. D, shown in the table as M16D. It is not a separate revision. Declared EOL (discontinued/end of life) as of Q4/2025; most P/Ns transition to M16H.
    4. 4 M32B. Micron lists MT60B4G8AT-64B:B with Production status. The letter B is used here as a reasonable assumption.
    5. 5 M24C. Native 7200 — Preliminary (preliminary data); 6400 — Production (mass production), 8000 — Advance (early 5 development). In the table, 7200 is the IC bin; modules are confirmed for JEDEC 6400, 52-52-52.
    6. 6 N16A. Confirmed Nanya 16 Gbit A-die revision (2024) for COLORFUL. Nanya 1B / D1B process (TechInsights); Colorful / Colorfire Scorpio SPD sample. Confirmed P/N: NT5FF2048M8A3-Q5. Separate OEM teardown by Igorslab, 27 May 2025.
    7. 7 S16D/S16E. S16D is unconfirmed for KF560C36BBE2AK2-32; S16E was reported by an owner without verifying the IC marking. Retail use requires confirmation.

    Main current IC revisions as of October 2026:H16A, H24M, H32A, M32B, S32M, H32M, M24C